CA NVRAM

結果: 277
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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 封裝/外殼
接口類型
存儲容量
組織
數據匯流排寬度
存取時間
電源電壓 - 最大值
電源電壓 - 最小值
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最低工作溫度
最高工作溫度
系列
封裝
Infineon Technologies CY14V104NA-BA45XI
Infineon Technologies NVRAM 1Mb 45ns 256K x 16 nvSRAM
規格書
397庫存量
最少： 1
倍數： 1

FBGA-48 CY14V104NA Tray
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM
規格書

EDIP-28 Parallel 64 kbit 8 k x 8 8 bit 150 ns 5.25 V 4.75 V 85 mA - 40 C + 85 C DS1225AB Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM
規格書

EDIP-28 Parallel 64 kbit 8 k x 8 8 bit 70 ns 5.25 V 4.75 V 75 mA 0 C + 70 C DS1225AB Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM
規格書

EDIP-28 Parallel 64 kbit 8 k x 8 8 bit 85 ns 5.25 V 4.75 V 75 mA 0 C + 70 C DS1225AB Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM
規格書

EDIP-28 Parallel 64 kbit 8 k x 8 8 bit 150 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1225AD Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM
規格書

EDIP-28 Parallel 64 kbit 8 k x 8 8 bit 200 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1225AD Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM
規格書

EDIP-28 Parallel 64 kbit 8 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1225AD Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 120 ns 5.25 V 4.75 V 85 mA 0 C + 70 C DS1230AB Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 150 ns 5.25 V 4.75 V 85 mA 0 C + 70 C DS1230AB Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 100 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1230Y Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 120 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1230Y Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 200 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1230Y Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1230Y Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM
規格書

EDIP-28 Parallel 256 kbit 32 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1230Y Tube
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM
規格書

EDIP-32 Parallel 1 Mbit 128 k x 8 8 bit 70 ns 5.25 V 4.75 V 85 mA 0 C + 70 C DS1245AB Tube
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM
規格書

EDIP-32 Parallel 1 Mbit 128 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1245Y Tube
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM
規格書

EDIP-32 Parallel 1 Mbit 128 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1245Y Tube
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM
規格書
更多資訊可用

EDIP-32 Parallel 1 Mbit 128 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1245Y Tube
Analog Devices / Maxim Integrated NVRAM 4096k Nonvolatile SRAM
規格書

EDIP-32 Parallel 4 Mbit 512 k x 8 8 bit 70 ns 5.25 V 4.75 V 85 mA 0 C + 70 C DS1250AB Tube
Analog Devices / Maxim Integrated NVRAM 4096k Nonvolatile SRAM
規格書

EDIP-32 Parallel 4 Mbit 512 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1250Y Tube
Analog Devices / Maxim Integrated NVRAM 4096k Nonvolatile SRAM
規格書

PowerCap Module-34 Parallel 4 Mbit 512 k x 8 8 bit 70 ns 5.5 V 4.5 V 85 mA - 40 C + 85 C DS1250YP Tray
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM with Battery Moni
規格書

PowerCap Module-34 Parallel 1 Mbit 128 k x 8 8 bit 100 ns 5.5 V 4.5 V 85 mA 0 C + 70 C DS1345Y Tray
Infineon Technologies NVRAM 1Mb 3V 40Mhz 128K x 8 SPI nvSRAM
規格書
1,304庫存量
最少： 1
倍數： 1

SOIC-16 SPI 1 Mbit 128 k x 8 8 bit 3.6 V 2.7 V 3 mA - 40 C + 85 C CY14B101PA Tube
Infineon Technologies NVRAM 1Mb 3V 40Mhz 128K x 8 SPI nvSRAM
規格書
922庫存量
最少： 1
倍數： 1

SOIC-8 SPI 1 Mbit 128 k x 8 8 bit 3.6 V 2.7 V 1 mA - 40 C + 85 C CY14B101Q2A Tube
Infineon Technologies NVRAM 4Mb 3V 25ns 256K x 16 nvSRAM
規格書
340庫存量
最少： 1
倍數： 1

FBGA-48 CY14B104NA Tray