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2ED2182S06FXUMA1

Name: Infineon 2ED2182S06FXUMA1
Brand: Infineon Technologies
SKU: 726-2ED2182S06FXUMA1
Price: 16.52 HKD
Availability: OutOfStock

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Mouser 編號：

726-2ED2182S06FXUMA1

製造商編號：

2ED2182S06FXUMA1

製造商：

Infineon Technologies

說明：

閘極驅動器 LEVEL SHIFT DRIVER

規格書:

2ED2182S06FXUMA1 規格書 (PDF)

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工廠前置作業時間：: 34 週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$16.52	HK$16.52
	HK$12.17	HK$121.70
	HK$11.10	HK$277.50
	HK$9.86	HK$986.00
	HK$9.29	HK$2,322.50
	HK$8.96	HK$4,480.00
	HK$8.71	HK$8,710.00
完整捲（訂購多個2500）
	HK$8.38	HK$20,950.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	閘極驅動器
RoHS:
產品:	IGBT, MOSFET Gate Drivers
類型:	Half-Bridge
安裝風格:	SMD/SMT
封裝/外殼:	DSO-8
驅動器數:	1 Driver
輸出數:	1 Output
輸出電流:	2.5 A
電源電壓 - 最小值:	10 V
電源電壓 - 最大值:	20 V
上升時間:	15 ns
下降時間:	15 ns
最低工作溫度:	- 40 C
最高工作溫度:	+ 125 C
封裝:	Reel
封裝:	Cut Tape
品牌:	Infineon Technologies
組裝國家:	Not Available
擴散國:	Not Available
原產國:	MY
邏輯類型:	CMOS, LSTTL
最長斷開延遲時間:	300 ns
最長接通延遲時間:	300 ns
濕度敏感:	Yes
運作供電電流:	550 uA
Pd - 功率消耗 :	625 mW
產品類型:	Gate Drivers
傳輸延遲 - 最大值:	300 ns
關機:	Shutdown
原廠包裝數量:	2500
子類別:	PMIC - Power Management ICs
技術:	Si
零件號別名:	2ED2182S06F SP003244532
每件重量:	233.750 mg

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所選屬性: 0

篩選文檔:

規格書

2ED2182S06FXUMA1 規格書 (PDF)

Models

2ED2182S06FXUMA1 Symbol & Footprint by SnapMagic

Product Catalogs

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CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

2ED218x High-Current 650V Half-Bridge Gate Drivers

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2ED210x低電流650V半橋閘極驅動器

Infineon 2ED210x低電流650V半橋閘極驅動器配備整合式靴帶式二極體，採用DSO-8或DSO-14封裝。2ED210x低電流0.7A驅動器是基於絕緣體上矽 (SOI) 技術。SOI技術是一種高電壓、電平偏移技術，具有獨特、可衡量以及業內最佳的優勢。其中包括整合式靴帶式二極體 (BSD) 及業界最佳的穩健性，可防止負瞬態電壓尖峰。該技術也可以降低電平轉換功率損耗，從而最大限度地降低裝置開關功耗。先進的流程支持採用具有技術增強優勢的單片高壓及低壓電路結構。

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Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.