1EDB6275FXUMA1

Infineon Technologies
726-1EDB6275FXUMA1
1EDB6275FXUMA1

製造商:

說明:
閘極驅動器 ISOLATED DRIVER

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,176

庫存:
1,176 可立即送貨
工廠前置作業時間:
39 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$11.59 HK$11.59
HK$8.80 HK$88.00
HK$8.07 HK$201.75
HK$7.29 HK$729.00
HK$6.90 HK$1,725.00
HK$6.66 HK$3,330.00
HK$6.34 HK$6,340.00
完整捲(訂購多個2500)
HK$6.11 HK$15,275.00
HK$6.04 HK$45,300.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 閘極驅動器
RoHS:  
Isolated Gate Drivers
Half-Bridge
SMD/SMT
DSO-8
1 Driver
1 Output
9 A
3 V
15 V
Inverting, Non-Inverting
8.3 ns
5 ns
- 40 C
+ 125 C
Reel
Cut Tape
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: DE
輸入電壓(最大值): 15 V
輸入電壓(最小值): 3 V
邏輯類型: CMOS
最長斷開延遲時間: 45 ns
最長接通延遲時間: 45 ns
濕度敏感: Yes
運作供電電流: 1 mA
輸出電壓: 20 V
Pd - 功率消耗 : 40 mW
產品類型: Gate Drivers
傳輸延遲 - 最大值: 4 ns
原廠包裝數量: 2500
子類別: PMIC - Power Management ICs
公司名稱: EiceDRIVER
零件號別名: 1EDB6275F SP005550375
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所選屬性: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER隔離式與非隔離式閘極驅動器IC

英飛凌EiceDRIVER™隔離式與非隔離式閘極驅動器IC適用於MOSFET、IGBT和IGBT模組,能提供經過最佳化的高低電壓閘極驅動器解決方案。這些隔離式與非隔離式閘極驅動器IC是專為打造可靠且高效的應用所設計。經過最佳化的閘極驅動器配置,對於無論是獨立形式或功率模組等所有電源開關而言,都是必不可少的。英飛凌閘極驅動器提供介於0.1A到最高10A的多樣化典型輸出電流選項,適合電源裝置的所有尺寸。

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.