RAMXEED Parallel Interface FeRAMs

RAMXEED Parallel Interface FeRAMs are FeRAM (Ferroelectric Random Access Memory) chips available in various bit configurations using ferroelectric and silicon gate CMOS process technologies. These devices can retain data without a backup battery, unlike SRAM. The memory cells in the RAMXEED Parallel Interface FeRAM can support 1014 read/write operations, a significant improvement over the read and write operations supported by Flash memory and E2PROM. These FeRAM devices use a pseudo-SRAM interface.

Features

Bit configurations
- MB85R8M1TA: 1,048,576 words × 8 bits
- MB85R8M2TA: 524,288 words × 16 bits
- MS85R4M1TA: 524,288 words × 8 bits
- MS85R4M2TA: 262,144 words × 16 bits
LB and UB data byte control (MS85R4M2TA only)
- Available configuration of 524,288 words × 8 bits
Read/write endurance
- MB85R8M1TA, MB85R8M2TA: 1014 times/64 bits
- MS85R4M1TA, MS85R4M2TA: 1014 times (+85°C), 1013 times (+105°C)
Data retention
- MB85R8M1TA, MB85R8M2TA: 10 years (+85°C), 95 years (+55°C), over 200 years (+35°C)
- MS85R4M1TA, MS85R4M2TA: 10 years (+105°C), 40 years (+85°C), over 200 years (+35°C)
Low power operation
- MB85R8M1TA, MB85R8M2TA: Operating power supply current of 18mA (max.)
- MS85R4M1TA, MS85R4M2TA: Operating power supply current 16mA (max.)

1.8V to 3.6V operating power supply voltage
Standby current of 150μA (max.)
- MB85R8M1TA, MB85R8M2TA: Sleep current of 10μA (max.)
- MS85R4M1TA, MS85R4M2TA: Sleep current 12μA (max.)
Operation ambient temperature range
- MB85R8M1TA, MB85R8M2TA: −40°C to +85°C
- MS85R4M1TA, MS85R4M2TA: −40°C to +105°C
Package
- MB85R8M1TA, MB85R8M2TA: 48-pin plastic FBGA
- MB85R8M1TA, MB85R8M2TA, MS85R4M1TA, MS85R4M2TA: 44-pin plastic TSOP
RoHS compliant