ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes
ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes are silicon epitaxial planar-structured diodes with 175°C. These diodes feature a 200V repetitive peak reverse voltage, ultra-low reverse current, 200V reverse voltage, and high reliability. The ultra-low IR Schottky barrier diodes are used in switching power supply, freewheel diodes, and reverse polarity protection applications.
Features
- Silicon epitaxial planar structure
- 200V repetitive peak reverse voltage (Duty≤0.5)
- Ultra-low reverse current
- 200V reverse voltage
- High reliability
- 175°C junction temperature
Applications
- Switching power supply
- Freewheel diodes
- Reverse polarity protection
Normalized Transient Thermal Impedance from Junction to Case (Per Device)
.png "Performance Graph - ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes")
發佈日期: 2025-06-16
| 更新日期: 2025-07-11