STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs
STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.
Features
- AEC-Q101 qualified
- Very high operating temperature capability (TJ = +200°C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Traction for inverters
- DC-DC converters for EV/HEV
- On Board Chargers (OBCs)
SIC MOSFET PORTFOLIO
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Associated Products
STMicroelectronics Silicon Carbide Power MOSFETs
Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.
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發佈日期: 2020-06-25
| 更新日期: 2026-02-03