Toshiba SiC Schottky Barrier Diodes
Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.
Applications
- Power Factor Correction
- Solar Inverters
- Uninterruptible Power Supplies
- DC-DC Converters
Related Products
Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes
Employ SiC and 2nd generation JBS chip design to allow higher-efficiency of power supply PFCs.
View Results ( 24 ) Page
| 零件編號 | 規格書 | 封裝/外殼 | Vf - 順向電壓 | If - 順向電流 | Ir - 反向電流 | Pd - 功率消耗 |
|---|---|---|---|---|---|---|
| TRS10A65F,S1Q |  |
TO-220F-2L | 1.45 V | 10 A | 500 nA | |
| TRS16N65FB,S1Q | |
TO-247-3 | 1.6 V | 16 A | 400 nA | 166 W |
| TRS8E65F,S1Q | |
TO-220-2 | 1.45 V | 8 A | 400 nA | |
| TRS10N120HB,S1Q | |
TO-247-3 | 1.27 V | 36 A | 500 nA | 211 W |
| TRS20H120H,S1Q | |
TO-247-2 | 1.27 V | 61 A | 2 uA | 312 W |
| TRS40H120H,S1Q | |
TO-247-2L | 1.27 V | 102 A | 3.6 uA | 454 W |
| TRS10H120H,S1Q | |
TO-247-2 | 1.27 V | 38 A | 1 uA | 211 W |
| TRS20N120HB,S1Q | |
TO-247-3 | 1.27 V | 64 A | 1 uA | 312 W |
| TRS30H120H,S1Q | |
TO-247-2L | 1.27 V | 83 A | 2.8 uA | 394 W |
| TRS12A65F,S1Q | |
TO-220F-2L | 1.45 V | 12 A | 600 nA | 41 W |
發佈日期: 2020-04-24
| 更新日期: 2024-12-19