Toshiba TRSx65H SiC Schottky Barrier Diodes
Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.
These SiC SBDs offer reduced power dissipation and contribute to higher efficiency in end-equipment. The Toshiba TRSx65H diodes are available in a TO-220-2L or compact, flat DFN8x8 surface mount package. TRSx65H diodes are intended for efficiency-critical industrial equipment applications, including switching power supplies, electric vehicle (EV) charging stations, and photovoltaic (PV) inverters.
Features
- 3rd generation chip design
- SiC technology
- Low forward voltage
- Low total capacitance charge
- Low reverse current
- Surface mount or through-hole
- DFN-8 or TO-220-2L package style options
Applications
- Power factor correction
- Solar inverters
- Uninterruptible power supplies
- DC-DC converters
Specifications
- 650V repetitive reverse voltage
- 1.2V forward voltage
- 2A to 12A forward current range
- 120A to 640A forward surge current range
- 2µA or 2.4µA reverse currents
- 48W to 107W power dissipation range
- 6.5nC to 33nC total capacitance charge range
- +175°C junction temperature
發佈日期: 2023-07-24
| 更新日期: 2023-09-26