IDH12SG60CXKSA2

Infineon Technologies
726-IDH12SG60CXKSA2
IDH12SG60CXKSA2

製造商：

說明：
碳化矽肖特基二極管 SIC DIODES

壽命週期:
NRND:
不建議用於新設計。
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庫存量: 1,247

庫存：
1,247
可立即送貨
在途量:
500
工廠前置作業時間：
52
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$61.73 HK$61.73
HK$40.44 HK$404.40
HK$29.76 HK$2,976.00
HK$26.47 HK$13,235.00
HK$23.34 HK$23,340.00

相似產品

Infineon Technologies IDH12G65C5XKSA2
Infineon Technologies
碳化矽肖特基二極管 SIC DIODES
與當前零件比較

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-220-2
Single
12 A
600 V
1.8 V
59 A
1 uA
- 55 C
+ 175 C
XDH12SG60
Tube
品牌: Infineon Technologies
組裝國家: MY
擴散國: AT
原產國: AT
Pd - 功率消耗 : 125 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 500
子類別: Diodes & Rectifiers
公司名稱: CoolSiC
Vr - 反向電壓: 600 V
零件號別名: IDH12SG60C SP001632404
每件重量: 2.002 g
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所選屬性: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

600V CoolSiC™ Schottky Diodes

Infineon 600V CoolSiC™ Schottky Diodes feature low device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. These devices are available in the TO-220 and D2PAK packages. The small form factor of the DPAK makes it particularly interesting for high-power density surface mount designs. The introduction of the DPAK further extends Infineon's product offering to account for different customer needs.

碳化矽CoolSiC™ MOSFET和二極體

英飛凌碳化矽CoolSiC™ MOSFET和二極體為能滿足更智慧節能的發電、電力輸送及用電需求的產品組合。CoolSiC產品組合能滿足客戶需求，幫助其縮小系統尺寸，降低中至高功率系統的成本，同時滿足最高的品質標準，延長系統使用壽命，可靠度大受保證。客戶一方面可透過CoolSiC達到最嚴格的效率目標，另一方面則能降低操作系統的成本。產品組合中包括CoolSiC肖特基二極體、CoolSiC混合式模組、CoolSiC MOSFET模組和獨立式裝置，以及用於驅動碳化矽裝置的EiceDRIVER™閘極驅動器IC。

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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