10170 MOSFET

結果: 22
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝

Infineon Technologies MOSFET HIGH POWER_LEGACY 844庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM 616庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.2 A 171 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_LEGACY 411庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER PRICE/PERFORM 1,510庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 19.2 A 189 mOhms - 20 V, 20 V 3.5 V 37 nC - 40 C + 150 C 151 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM 613庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 Ohms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM 915庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 2,881庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22.4 A 162 mOhms - 20 V, 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_PRC/PRFRM 430庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 540 mOhms - 20 V, 20 V 3.5 V 12 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_LEGACY 7,737庫存量
1,500在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3 328庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY 343庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 8.6A TO220FP-3 545庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms - 20 V, 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3 30庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3 736庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3 49庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 12 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 12 週
最少: 500
倍數: 500

Si Through Hole TO-220FP-3 N-Channel 1 Channel CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 10 週
最少: 240
倍數: 240

Si Through Hole TO-247-3 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 6.5A TO220FP-3 無庫存前置作業時間 12 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10.6 A 342 mOhms - 20 V, 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 無庫存前置作業時間 39 週
最少: 3,000
倍數: 3,000
: 3,000

Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 22.4 A 162 mOhms - 20 V, 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel
Infineon Technologies MOSFET LOW POWER_LEGACY 無庫存前置作業時間 11 週
最少: 500
倍數: 500

Si Through Hole TO-220FP-3 N-Channel 1 Channel CoolMOS Tube
Infineon Technologies MOSFET LOW POWER PRICE/PERFORM 無庫存前置作業時間 39 週
最少: 3,000
倍數: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 19.2 A 189 mOhms - 20 V, 20 V 3.5 V 37 nC - 40 C + 150 C 151 W Enhancement CoolMOS Reel