|
|
碳化矽MOSFET 750V/18MOSICFETG4TO263
- UJ4SC075018B7S
- onsemi
-
1:
HK$174.76
-
1,207庫存量
-
800在途量
|
Mouser 元件編號
431-UJ4SC075018B7S
|
onsemi
|
碳化矽MOSFET 750V/18MOSICFETG4TO263
|
|
1,207庫存量
800在途量
|
|
|
HK$174.76
|
|
|
HK$125.68
|
|
|
HK$122.97
|
|
|
HK$122.23
|
|
|
HK$116.40
|
|
最少: 1
倍數: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
72 A
|
18 mOhms
|
- 20 V, + 20 V
|
6 V
|
37.8 nC
|
- 55 C
|
+ 175 C
|
259 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/5MOSICFETG4TOLL
- UJ4SC075005L8S
- onsemi
-
1:
HK$392.18
-
857庫存量
-
1,884在途量
|
Mouser 元件編號
431-UJ4SC075005L8S
|
onsemi
|
碳化矽MOSFET 750V/5MOSICFETG4TOLL
|
|
857庫存量
1,884在途量
|
|
|
HK$392.18
|
|
|
HK$338.66
|
|
|
HK$338.42
|
|
|
HK$338.34
|
|
|
HK$314.00
|
|
最少: 1
倍數: 1
:
2,000
|
|
|
SMD/SMT
|
MO-229-8
|
N-Channel
|
1 Channel
|
750 V
|
120 A
|
5 mOhms
|
- 20 V, + 20 V
|
6 V
|
164 nC
|
- 55 C
|
+ 175 C
|
1.153 kW
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/8MOSICFETG4TOLL
- UJ4SC075008L8S
- onsemi
-
1:
HK$260.33
-
1,303庫存量
-
1,970在途量
|
Mouser 元件編號
431-UJ4SC075008L8S
|
onsemi
|
碳化矽MOSFET 750V/8MOSICFETG4TOLL
|
|
1,303庫存量
1,970在途量
|
|
|
HK$260.33
|
|
|
HK$203.45
|
|
|
HK$202.87
|
|
|
HK$202.79
|
|
|
HK$192.59
|
|
最少: 1
倍數: 1
:
2,000
|
|
|
SMD/SMT
|
MO-229-8
|
N-Channel
|
1 Channel
|
750 V
|
106 A
|
8 mOhms
|
- 20 V, + 20 V
|
5.5 V
|
75 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/18MOSICFETG4TOLL
- UJ4SC075018L8S
- onsemi
-
1:
HK$166.37
-
1,475庫存量
|
Mouser 元件編號
431-UJ4SC075018L8S
|
onsemi
|
碳化矽MOSFET 750V/18MOSICFETG4TOLL
|
|
1,475庫存量
|
|
|
HK$166.37
|
|
|
HK$119.27
|
|
|
HK$115.49
|
|
|
HK$115.41
|
|
|
HK$109.33
|
|
最少: 1
倍數: 1
:
2,000
|
|
|
SMD/SMT
|
MO-229-8
|
N-Channel
|
1 Channel
|
750 V
|
53 A
|
18 mOhms
|
- 20 V, + 20 V
|
6 V
|
37.8 nC
|
- 55 C
|
+ 175 C
|
349 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/9MOSICFETG4TO263-
- UJ4SC075009B7S
- onsemi
-
1:
HK$257.37
-
444庫存量
|
Mouser 元件編號
431-UJ4SC075009B7S
|
onsemi
|
碳化矽MOSFET 750V/9MOSICFETG4TO263-
|
|
444庫存量
|
|
|
HK$257.37
|
|
|
HK$200.57
|
|
|
HK$187.25
|
|
|
HK$187.25
|
|
最少: 1
倍數: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
106 A
|
9 mOhms
|
- 20 V, + 20 V
|
5.5 V
|
75 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/11MOSICFETG4TO263
- UJ4SC075011B7S
- onsemi
-
1:
HK$227.28
-
322庫存量
|
Mouser 元件編號
431-UJ4SC075011B7S
|
onsemi
|
碳化矽MOSFET 750V/11MOSICFETG4TO263
|
|
322庫存量
|
|
|
HK$227.28
|
|
|
HK$179.61
|
|
|
HK$168.02
|
|
|
HK$162.43
|
|
最少: 1
倍數: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7L
|
N-Channel
|
1 Channel
|
750 V
|
104 A
|
11 mOhms
|
- 20 V, + 20 V
|
5.5 V
|
75 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/11MOSICFETG4TO247
- UJ4SC075011K4S
- onsemi
-
1:
HK$164.24
-
536庫存量
|
Mouser 元件編號
431-UJ4SC075011K4S
|
onsemi
|
碳化矽MOSFET 750V/11MOSICFETG4TO247
|
|
536庫存量
|
|
|
HK$164.24
|
|
|
HK$104.89
|
|
|
HK$94.53
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
104 A
|
11 mOhms
|
- 20 V, + 20 V
|
5.5 V
|
75 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/6MOSICFETG4TO247-
- UJ4SC075006K4S
- onsemi
-
1:
HK$441.83
-
5庫存量
|
Mouser 元件編號
431-UJ4SC075006K4S
|
onsemi
|
碳化矽MOSFET 750V/6MOSICFETG4TO247-
|
|
5庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
120 A
|
5.9 mOhms
|
- 20 V, + 20 V
|
6 V
|
164 nC
|
- 55 C
|
+ 175 C
|
714 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/10MOSICFETG4TOLL
- UJ4SC075010L8S
- onsemi
-
2,000:
HK$168.43
-
2,000工廠有庫存
|
Mouser 元件編號
772-UJ4SC075010L8S
|
onsemi
|
碳化矽MOSFET 750V/10MOSICFETG4TOLL
|
|
2,000工廠有庫存
|
|
最少: 2,000
倍數: 2,000
:
2,000
|
|
|
SMD/SMT
|
MO-229-8
|
N-Channel
|
1 Channel
|
750 V
|
106 A
|
10.7 mOhms
|
- 20 V, + 20 V
|
5.5 V
|
75 nC
|
- 55 C
|
+ 175 C
|
556 W
|
Enhancement
|
SiC FET
|
|
|
|
碳化矽MOSFET 750V/9MOSICFETG4TO247-
- UJ4SC075009K4S
- onsemi
-
600:
HK$201.80
-
無庫存前置作業時間 31 週
|
Mouser 元件編號
431-UJ4SC075009K4S
|
onsemi
|
碳化矽MOSFET 750V/9MOSICFETG4TO247-
|
|
無庫存前置作業時間 31 週
|
|
最少: 600
倍數: 600
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
106 A
|
9 mOhms
|
- 20 V, + 20 V
|
5.5 V
|
75 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
SiC FET
|
|