STMicroelectronics IGBT

結果: 203
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數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
系列
資格
封裝
STMicroelectronics IGBT 600V 60A Trench Gate 1.8V Vce IGBT
規格書
258庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
規格書

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBT 19A 600V Very Fast IGBT Ultrafast Diode
規格書
336庫存量
更多資訊可用
最少： 1
倍數： 1

Si TO-247 Through Hole Single 600 V 1.8 V - 20 V, 20 V 52 A 208 W - 55 C + 150 C STGWA19NC60HD Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
規格書

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
規格書

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
規格書

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGWA40H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
規格書

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
規格書
158庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
規格書

Si TO-247-3 Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWA60H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
規格書

Si TO-3P Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 168 W - 55 C + 175 C STGWT20H65FB Tube
STMicroelectronics IGBT 1250V 20A trench gte field-stop IGBT
規格書
613庫存量
最少： 1
倍數： 1

Si TO-3P Through Hole Single 1.25 kV 2.55 V - 20 V, 20 V 40 A 259 W - 55 C + 175 C STGWT20IH125DF Tube
STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
規格書

Si TO-3P Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGWT30H60DFB Tube
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT
規格書

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWT60H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long l
規格書

Si MAX257-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 150 A 750 W - 55 C + 175 C Tube
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
規格書
181庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube
STMicroelectronics IGBT PowerMESH TM IGBT
規格書
1,000在途量
可選用MouseReel
最少： 1
倍數： 1
捲: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 2.7 V - 20 V, 20 V 15 A 62.5 W - 55 C + 150 C STGB6NC60HDT4 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 600V 30A High Speed Trench Gate IGBT
規格書
1,000在途量
最少： 1
倍數： 1

Si TO-220-3 Through Hole Single 600 V 2.4 V - 20 V, 20 V 60 A 260 W - 40 C + 175 C STGP30H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT ACEPACK SMIT
規格書

Si ACEPACK-9 SMD/SMT Dual 1.2 kV 2.2 V 20 V 69 A 536 W - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 19 A - 600 V Very fast IGBT
規格書
更多資訊可用
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 42 A 140 W - 55 C + 150 C STGW19NC60HD Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
規格書

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
規格書

Si TO-247-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGW30H60DFB Tube


STMicroelectronics IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac
規格書

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 357 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
規格書

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
規格書

Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
規格書

Si TO-247-4 Through Hole Single 650 V 1.55 V - 20 V, 20 V 145 A 441 W - 55 C + 150 C HB2 Tube