STGF30M65DF2

STMicroelectronics
511-STGF30M65DF2
STGF30M65DF2

製造商:

說明:
IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 411

庫存:
411 可立即送貨
工廠前置作業時間:
15 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$24.33 HK$24.33
HK$12.08 HK$120.80
HK$10.93 HK$1,093.00
HK$8.88 HK$4,440.00
HK$8.47 HK$8,470.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-220FP-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
60 A
38 W
- 55 C
+ 175 C
STGF30M65DF2
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 60 A
組裝國家: CN
擴散國: Not Available
原產國: CN
柵射極漏電電流: 250 uA
產品類型: IGBT Transistors
原廠包裝數量: 1000
子類別: IGBTs
每件重量: 2 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.