IXYS MOSFET

結果: 1,577
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
IXYS MOSFET 10 Amps 800V 1.1 Rds 8,999庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1,148庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET TO263 200V 86A N-CH X4CLASS 2,003庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 86 A 13 mOhms - 20 V, 20 V 4.5 V 70 nC - 55 C + 175 C 300 W Enhancement Tube
IXYS MOSFET 230A 200V 903庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 230 A 7.5 mOhms - 20 V, 20 V 5 V 358 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube


IXYS MOSFET ISOPLUS 4.7KV 2A N-CH HIVOLT 344庫存量
最少: 1
倍數: 1

Si Through Hole ISOPLUS-i5-PAK-3 N-Channel 1 Channel 4.7 kV 2 A 20 Ohms - 20 V, 20 V 3.5 V 180 nC - 55 C + 150 C 220 W Enhancement ISOPLUS i5-PAC Tube
IXYS MOSFET PLUS247 4.5KV 1.4A N-CH HIVOLT 267庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 4.5 kV 1.4 A 40 Ohms - 20 V, 20 V 6 V 88 nC - 55 C + 150 C 960 W Enhancement Tube
IXYS MOSFET -96 Amps -85V 0.013 Rds 3,737庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 85 V 96 A 13 mOhms - 15 V, 15 V 2 V 180 nC - 55 C + 150 C 298 W Enhancement Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,540庫存量
75在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET DiscMosfet NCh Std-VeryHiVolt TO-268AA 305庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 2.5 kV 1.5 A 40 Ohms - 20 V, 20 V 2 V 41 nC - 55 C + 150 C 250 W Enhancement Tube
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A 66庫存量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 44 A 220 mOhms - 30 V, 30 V 3.5 V 264 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFET 1 Amps 1200V 20 Rds 1,111庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 1 A 20 Ohms - 20 V, 20 V 4.5 V 17.6 nC - 55 C + 150 C 63 W Enhancement Tube
IXYS MOSFET PolarP2 Power MOSFET 290庫存量
300在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube

IXYS MOSFET 96 Amps 200V 0.024 Rds 255庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement PolarHT Tube
IXYS MOSFET 1000V 32A TO-264 Power MOSFET 194庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 186庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET Disc Mosfet N-CH Linear L2 TO-247AD 413庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 240 A 7 mOhms - 20 V, 20 V 2 V 546 nC - 55 C + 150 C 960 W Enhancement LinearL2 Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 158庫存量
90在途量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms - 20 V, 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFET IXTA130N10T TRL 888庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 130 A 9.1 mOhms - 30 V, 30 V 2.5 V 104 nC - 55 C + 175 C 360 W Enhancement TrenchMV Reel, Cut Tape
IXYS MOSFET TO247 650V 24A N-CH X2CLASS 586庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 8 Amps 1500V 398庫存量
600在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.5 kV 8 A 3.6 Ohms - 30 V, 30 V 8 V 250 nC - 55 C + 150 C 700 W Enhancement Tube
IXYS MOSFET 360Amps 55V 518庫存量
530在途量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFET Trench HiperFET Power MOSFET 169庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms HiPerFET Tube

IXYS MOSFET MOSFET 650V/34A Ultra Junction X2 660庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET PolarP2 Power MOSFET 1,128庫存量
780在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 52 A 120 mOhms - 30 V, 30 V 4.5 V 113 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 56A N-CH X3CLASS 499庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube