IXYS MOSFET

結果: 1,577
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
IXYS MOSFET TO220 200V 94A N-CH X4CLASS 719庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms - 20 V, 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET 170 Amps 100V 0.009 Ohm Rds 1,286庫存量
1,170在途量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement Tube
IXYS MOSFET 96 Amps 200V 0.024 Rds 316庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 2.5 V 145 nC - 55 C + 175 C 600 W Enhancement Tube
IXYS MOSFET LINEAR L2 SERIES MOSFET 100V 75A 261庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 75 A 21 mOhms - 20 V, 20 V 4.5 V 215 nC - 55 C + 150 C 400 W Enhancement Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A 262庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 660 mOhms - 30 V, 30 V 3.5 V 90 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/60A Ultra Junction X2 889庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFET PolarHT HiperFET 100v, 170A 1,386庫存量
331在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 80A 398庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 3 V 197 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A 236庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 420 A 2.6 mOhms - 20 V, 20 V 5 V 670 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFET TO252 200V 36A N-CH X3CLASS 1,756庫存量
1,820在途量
最少: 1
倍數: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 200 V 36 A 38 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET -36.0 Amps -150V 0.110 Rds 793庫存量
最少: 1
倍數: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 150 V 36 A 110 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 300 W Enhancement PolarP Reel, Cut Tape, MouseReel
IXYS MOSFET TO263 150V 44A P-CH TRENCH 1,294庫存量
800預期5/5/2026
最少: 1
倍數: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 150 V 44 A 65 mOhms - 15 V, 15 V 2 V 175 nC - 55 C + 150 C 298 W Enhancement TrenchP Reel, Cut Tape, MouseReel
IXYS MOSFET TO247 3KV 2A N-CH POLAR 296庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 3 kV 2 A 21 Ohms - 20 V, 20 V 3 V 73 nC - 55 C + 150 C 520 W Enhancement Polar3 Tube

IXYS MOSFET 40 Amps 500V 510庫存量
740在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 40 A 170 mOhms - 20 V, 20 V 4.5 V 320 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET 1700V 2A 119庫存量
300在途量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms - 20 V, 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Depletion Tube

IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 110A 282庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 110 A 24 mOhms - 20 V, 20 V 4.5 V 500 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube
IXYS MOSFET TO263 250V 30A N-CH HIPER 547庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube

IXYS MOSFET 170 Amps 100V 0.009 Rds 368庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube

IXYS MOSFET Trench HiperFET Power MOSFET 299庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 86 A 43 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFET 88 Amps 300V 0.04 Rds 234庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 88 A 40 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube
IXYS MOSFET TO252 250V 30A N-CH X3CLASS 661庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET -96 Amps -85V 0.013 Rds 3,737庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 85 V 96 A 13 mOhms - 15 V, 15 V 2 V 180 nC - 55 C + 150 C 298 W Enhancement Tube

IXYS MOSFET 6 Amps 1200V 2.700 Rds 193庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.4 Ohms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET TO247 650V 80A N-CH X2CLASS 239庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET -10.0 Amps -500V 1.000 Rds 488庫存量
530在途量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 P-Channel 1 Channel 500 V 10 A 1 Ohms - 20 V, 20 V 4.5 V 50 nC - 55 C + 150 C 300 W Enhancement Tube