HyperFET MOSFET

結果: 116
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝

IXYS MOSFET 500V 24A 無庫存前置作業時間 26 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 24 A 230 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET DIODE Id26 BVdass500 無庫存前置作業時間 26 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 200 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 30 Amps 400V 0.16 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 400 V 30 A 160 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 30 Amps 600V 0.23 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 230 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFET 36 Amps 550V 0.16 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 36 A 160 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFET 36 Amps 550V 0.16 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 36 A 180 mOhms - 30 V, 30 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFET 300V 40A 無庫存前置作業時間 29 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 40 A 85 mOhms - 20 V, 20 V 4 V 177 nC - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 42 Amps 200V 無庫存前置作業時間 29 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 42 A 60 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET DIODE Id50 BVdass200 無庫存前置作業時間 29 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 45 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 200V 58A 暫無庫存
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 58 A 40 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 60 Amps 200V 0.033 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 33 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 67 Amps 100V 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 67 A 25 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 70V 76A 無庫存前置作業時間 39 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 76 A 11 mOhms - 20 V, 20 V - 55 C + 175 C 360 W Enhancement HyperFET Tube

IXYS MOSFET 70V 76A 暫無庫存
最少: 90
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 76 A 12 mOhms - 20 V, 20 V - 55 C + 175 C 360 W Enhancement HyperFET Tube

IXYS MOSFET 7 Amps 800V 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 7 A 1.4 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube

IXYS MOSFET 7 Amps 900V 1.5W Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 7 A 1.5 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube

IXYS MOSFET 80 Amps 100V 0.125 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 80 A 12.5 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 88 Amps 200V 0.03 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 88 A 30 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFET 8 Amps 800V 1.1 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 8 A 1.1 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFET 13 Amps 500V 0.4 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-268-3 N-Channel 1 Channel 500 V 13 A 400 mOhms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFET 70V 110A 無庫存前置作業時間 37 週
最少: 300
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 110 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFET 120 Amps 250V 0.022 Rds 暫無庫存
最少: 25
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 120 A 22 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFET 150 Amps 100V 暫無庫存
最少: 25
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 150 A 12 mOhms HyperFET Tube
IXYS MOSFET 150 Amps 150V 0.0125 Rds 暫無庫存
最少: 25
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 150 A 12.5 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFET 16 Amps 900V 0.65 Rds 暫無庫存
最少: 25
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 16 A 650 mOhms - 20 V, 20 V - 55 C + 150 C 360 W Enhancement HyperFET Tube