HyperFET MOSFET

結果: 116
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET 4 Amps 1000V 2.8 Rds 414庫存量
最少: 1
倍數: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 4 A 3 Ohms - 20 V, 20 V 4.5 V 39 nC - 55 C + 150 C 150 W Enhancement HyperFET Tube

IXYS MOSFET 6 Amps 1200V 2.4 Rds 284庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 1KV 6A 226庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 2 Ohms - 20 V, 20 V 4.5 V 88 nC - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 29庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 50 A 125 mOhms - 30 V, 30 V 3 V 85 nC - 55 C + 150 C 960 W Enhancement HyperFET Tube
IXYS MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode 暫無庫存
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 8 A 800 mOhms HyperFET Tube
IXYS MOSFET DIODE Id48 BVdass500 無庫存前置作業時間 37 週
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFET 800V 34A 無庫存前置作業時間 27 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 34 A 240 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFET 3.6 Amps 800V 3.6 Rds 暫無庫存
最少: 50
倍數: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 3.6 A 3.6 Ohms - 20 V, 20 V - 55 C + 150 C 100 W Enhancement HyperFET Tube
IXYS MOSFET 72 Amps 550V 0.07 Rds 暫無庫存
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 550 V 72 A 72 mOhms - 30 V, 30 V - 55 C + 150 C 890 W Enhancement HyperFET Tube
IXYS MOSFET 80 Amps 500V 0.06 Rds 無庫存前置作業時間 44 週
最少: 300
倍數: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 500 V 80 A 60 mOhms - 30 V, 30 V 5.5 V 250 nC - 55 C + 150 C 960 W Enhancement HyperFET Tube
IXYS MOSFET 48 Amps 500V 0.1 Rds 暫無庫存
最少: 25
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 90 mOhms - 20 V, 20 V - 40 C + 150 C 400 W Enhancement HyperFET Tube

IXYS MOSFET 1KV 10A 暫無庫存
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.2 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 11 Amps 800V 無庫存前置作業時間 27 週
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 950 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 1KV 12A 無庫存前置作業時間 27 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 12 Amps 1200V 1.3 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 1.4 Ohms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFET 900V 12A 暫無庫存
最少: 60
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 1.1 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 13 Amps 1000V 0.9 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12.5 A 900 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 800V 13A 暫無庫存
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 13 Amps 800V 0.8 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 700 mOhms - 20 V, 20 V - 55 C + 150 C 250 W Enhancement HyperFET Tube

IXYS MOSFET 13 Amps 900V 0.8 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 14 Amps 800V 0.7 Rds 暫無庫存
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 700 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 15 Amps 600V 無庫存前置作業時間 27 週
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15 A 500 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 800V 15A 無庫存前置作業時間 27 週
最少: 30
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 15 A 600 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 600V 20A 無庫存前置作業時間 27 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 350 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFET 500V 21A 暫無庫存
最少: 90
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 21 A 250 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube