|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
HK$239.70
-
1,597庫存量
|
Mouser 元件編號
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597庫存量
|
|
|
HK$239.70
|
|
|
HK$183.39
|
|
|
HK$182.90
|
|
|
HK$182.81
|
|
|
HK$171.22
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
HK$131.68
-
2,319庫存量
|
Mouser 元件編號
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,319庫存量
|
|
|
HK$131.68
|
|
|
HK$93.05
|
|
|
HK$85.57
|
|
|
HK$85.49
|
|
|
HK$82.28
|
|
|
HK$79.90
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
HK$93.05
-
969庫存量
|
Mouser 元件編號
511-SCT040H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
969庫存量
|
|
|
HK$93.05
|
|
|
HK$63.21
|
|
|
HK$54.42
|
|
|
HK$54.33
|
|
|
HK$50.88
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
HK$141.38
-
570庫存量
|
Mouser 元件編號
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
570庫存量
|
|
|
HK$141.38
|
|
|
HK$87.71
|
|
|
HK$87.54
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
HK$267.56
-
714庫存量
|
Mouser 元件編號
511-SCTW70N120G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
HK$165.06
-
5庫存量
-
新產品
|
Mouser 元件編號
511-SCT019HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
5庫存量
|
|
|
HK$165.06
|
|
|
HK$135.79
|
|
|
HK$117.46
|
|
|
HK$103.82
|
|
最少: 1
倍數: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
HK$212.49
-
45庫存量
|
Mouser 元件編號
511-SCTW90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
45庫存量
|
|
|
HK$212.49
|
|
|
HK$190.05
|
|
|
HK$166.29
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
HK$170.48
-
637庫存量
-
新產品
|
Mouser 元件編號
511-SCT012W90G3-4AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
637庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
HK$191.61
-
832庫存量
-
新產品
|
Mouser 元件編號
511-SCT016H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
832庫存量
|
|
|
HK$191.61
|
|
|
HK$138.67
|
|
|
HK$138.42
|
|
|
HK$138.34
|
|
|
HK$129.22
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
HK$168.59
-
667庫存量
-
600在途量
-
新產品
|
Mouser 元件編號
511-SCT020HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
667庫存量
600在途量
|
|
|
HK$168.59
|
|
|
HK$139.74
|
|
|
HK$120.83
|
|
|
HK$112.20
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
HK$104.15
-
1,071庫存量
-
新產品
|
Mouser 元件編號
511-SCT027H65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,071庫存量
|
|
|
HK$104.15
|
|
|
HK$72.99
|
|
|
HK$63.46
|
|
|
HK$59.27
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
HK$111.05
-
653庫存量
-
新產品
|
Mouser 元件編號
511-SCT040HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
653庫存量
|
|
|
HK$111.05
|
|
|
HK$77.76
|
|
|
HK$68.55
|
|
|
HK$67.24
|
|
|
HK$64.03
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
HK$70.12
-
1,764庫存量
-
1,799在途量
-
新產品
|
Mouser 元件編號
511-SCT055TO65G3
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,764庫存量
1,799在途量
|
|
|
HK$70.12
|
|
|
HK$48.09
|
|
|
HK$42.42
|
|
|
HK$38.55
|
|
|
HK$35.26
|
|
|
HK$35.26
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
HK$205.58
-
118庫存量
-
新產品
|
Mouser 元件編號
511-SCT011HU75G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
118庫存量
|
|
|
HK$205.58
|
|
|
HK$151.08
|
|
|
HK$151.00
|
|
|
HK$141.06
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
HK$78.58
-
37庫存量
-
新產品
|
Mouser 元件編號
511-SCT040TO65G3
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37庫存量
|
|
|
HK$78.58
|
|
|
HK$59.35
|
|
|
HK$44.06
|
|
|
HK$41.10
|
|
|
HK$41.10
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
HK$168.92
-
139庫存量
|
Mouser 元件編號
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
139庫存量
|
|
|
HK$168.92
|
|
|
HK$121.33
|
|
|
HK$117.87
|
|
|
HK$110.07
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
HK$127.25
-
175庫存量
|
Mouser 元件編號
511-SCT018H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
175庫存量
|
|
|
HK$127.25
|
|
|
HK$89.84
|
|
|
HK$86.47
|
|
|
HK$81.87
|
|
|
HK$76.45
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
HK$128.40
-
532庫存量
|
Mouser 元件編號
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532庫存量
|
|
|
HK$128.40
|
|
|
HK$90.67
|
|
|
HK$77.27
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
HK$155.36
-
513庫存量
-
Mouser新產品
|
Mouser 元件編號
511-SCT020W120G3-4AG
Mouser新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
HK$158.89
-
587庫存量
|
Mouser 元件編號
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
587庫存量
|
|
|
HK$158.89
|
|
|
HK$106.20
|
|
|
HK$97.82
|
|
|
HK$91.49
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
HK$148.54
-
471庫存量
-
Mouser新產品
|
Mouser 元件編號
511-SCT025W120G3AG
Mouser新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
471庫存量
|
|
|
HK$148.54
|
|
|
HK$108.67
|
|
|
HK$95.43
|
|
|
報價
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|
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報價
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最少: 1
倍數: 1
|
|
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Through Hole
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HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
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碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
HK$133.82
-
338庫存量
|
Mouser 元件編號
511-SCT027W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338庫存量
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
HK$108.09
-
670庫存量
|
Mouser 元件編號
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
670庫存量
|
|
|
HK$108.09
|
|
|
HK$75.54
|
|
|
HK$61.81
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
HK$107.27
-
584庫存量
|
Mouser 元件編號
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
584庫存量
|
|
|
HK$107.27
|
|
|
HK$74.97
|
|
|
HK$61.24
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
HK$86.97
-
537庫存量
-
600在途量
-
Mouser新產品
|
Mouser 元件編號
511-SCT040W65G3-4
Mouser新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537庫存量
600在途量
|
|
|
HK$86.97
|
|
|
HK$53.27
|
|
|
HK$50.64
|
|
|
HK$48.25
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|