新型MOSFET模組
onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module features 15mΩ/1200V M3S SiC MOSFET full-bridge topology and a thermistor with Al2O3 DBC in an F1 package. This power module features at +22V/-10V gate source voltage, 77A continuous drain current @ TC = 80°C (TJ = 175°C), 198W maximum power dissipation, and 12.7mm creepage distance. The NXH015F120M3F1PTG SiC MOSFET comes with pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The SiC module is Pb-free, Halide-free, and RoHS compliant. Typical applications include a solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power.
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onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) ModuleFeatures 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.23/5/2025
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Wolfspeed YM Six-Pack Silicon Carbide Power ModulesAutomotive-qualified modules that are designed for seamless design integration and durability.14/5/2025 -
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power ModulesRobust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.20/2/2025 -
IXYS IXTNx00N20X4 miniBLOC MOSFETsOffers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.28/11/2024 -
onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) ModulesContains 8mΩ, 10mΩ, 15mΩ, and 30mΩ/1200V M3S MOSFETs based on half-bridge topology.28/8/2024 -
onsemi NVVR26A120M1WSx Silicon Carbide (SiC) ModulesPart of VE-Trac™ B2 SiC highly integrated power modules for EV/HEV traction inverter applications.14/8/2024 -
Infineon Technologies XHP™ 2 CoolSiC™ MOSFET Half-Bridge ModulesDesigned for applications ranging from 1.7kV to 3.3kV to maximize current-carrying capabilities.9/8/2024 -
Wolfspeed DM SiC半橋模組Offers high-current capability in a very low mass and low volume form factor.25/6/2024 -
SemiQ GCMX 1200V SiC MOSFET全橋模組非常適合光伏逆變器、儲能系統和高壓DC-DC轉換器。21/3/2024 -
SemiQ GCMX 1200V SiC MOSFET半橋模組低開關損耗、低結至外殼熱阻，並且非常堅固且易於安裝。21/3/2024 -
onsemi NXV08H350XT1 MOSFET ModuleCompactly designed, 2-phase, dual half bridge, 80V automotive power MOSFET module.4/3/2024 -
onsemi NXV08H300DT1 MOSFET ModuleCompactly designed, 2-phase, dual half bridge, 80V automotive power MOSFET module.4/3/2024 -
onsemi NVXR17S90M2SPx EliteSiC Power ModulesEnhance efficiency, power density, and overall performance.8/2/2024 -
onsemi NVXR22S90M2SPx EliteSiC Power ModulesOffers improved performance, efficiency, and power density in compact and compatible packaging.8/2/2024 -
Infineon Technologies 1200V CoolSiC™ M1H ModulesOffers EV Charging and other inverter designer's opportunities.5/12/2023 -
onsemi NXH00xP120M3F2PTxG EliteSIC半橋模組具有兩個3mΩ或4m Ω 1200V SIC MOSFET開關和一個帶有HPS DBC或Si3N4 DBC的熱敏電阻。23/11/2023 -
onsemi NXH008T120M3F2PTHG Silicone Carbide (SiC) ModuleT-type neutral point clamped converter (TNPC) module based on 1200V M3S Planer SiC MOSFETs.9/11/2023 -
STMicroelectronics M1F45M12W2-1LA ACEPACK DMT‑32 Power ModuleDesigned for hybrid and electric vehicles' DC/DC converter stage.19/10/2023 -
onsemi NXV10Vx 3-Phase Automotive Power MOSFET ModulesEngineered for high-efficiency power management in automotive applications.7/10/2023 -
onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules1200V, 80mΩ 3-phase bridge power modules, housed in a Dual Inline Package (DIP).31/8/2023 -
onsemi NVXK2VR40WXT2 Silicon Carbide (SiC) Module1200V, 40mΩ, and 55A 3-phase bridge power module, housed in a Dual Inline Package (DIP).31/8/2023 -
onsemi NVXK2PR80WXT2 Silicon Carbide (SiC) Module1200V, 80mΩ, and 31A full-bridge power module, housed in a Dual Inline Package (DIP).31/8/2023 -
onsemi EliteSiC滿足太陽能逆變器和電動汽車充電器等嚴苛應用的需求。15/3/2023 -
SemiQ GCMX040B120S1-E1 1200V SiC MOSFET Power ModuleThe module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.9/3/2023 -
SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power ModuleThe module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.9/3/2023