Toshiba 碳化矽MOSFET

結果: 27
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 45mohm 111庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 182 mOhms - 10 V, + 25 V 5 V 57 nC - 55 C + 175 C 182 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247 48mohm 82庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 65 mOhms - 10 V, + 25 V 5 V 41 nC - 55 C + 175 C 132 W Enhancement
Toshiba 碳化矽MOSFET N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2,500庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 53 A 45 mOhms - 10 V, 25 V 5 V 65 nC + 175 C 156 W Enhancement
Toshiba 碳化矽MOSFET N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2,480庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 36 A 81 mOhms - 10 V, 25 V 5 V 41 nC + 175 C 132 W Enhancement
Toshiba 碳化矽MOSFET N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2,493庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 27 A 136 mOhms - 10 V, 25 V 5 V 28 nC + 175 C 111 W Enhancement
Toshiba 碳化矽MOSFET N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2,500庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 18 A 183 mOhms - 10 V, 25 V 5 V 21 nC + 175 C 76 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 15mohm 31庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 100 A 182 mOhms - 10 V, + 25 V 5 V 158 nC - 55 C + 175 C 431 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247 15mohm 49庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 21 mOhms - 10 V, + 25 V 5 V 128 nC - 55 C + 175 C 342 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247-4L 15mohm 142庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 100 A 15 mOhms - 10 V, + 25 V 5 V 128 nC + 175 C 342 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 60mohm 224庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 182 mOhms - 10 V, + 25 V 5 V 46 nC - 55 C + 175 C 170 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247-4L 45mohm 50庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 40 A 45 mOhms - 10 V, + 25 V 5 V 57 nC + 175 C 182 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247-4L 107mohm 45庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 107 mOhms - 10 V, + 25 V 5 V 21 nC + 175 C 76 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247-4L 30mohm 40庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 30 mOhms - 10 V, + 25 V 5 V 82 nC + 175 C 249 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247-4L 48mohm 82庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 40 A 48 mOhms - 10 V, + 25 V 5 V 41 nC + 175 C 132 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247-4L 60mohm 36庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 10 V, + 25 V 5 V 46 nC + 175 C 170 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247 83mohm 25庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 145 mOhms - 10 V, + 25 V 5 V 21 nC - 55 C + 175 C 76 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247-4L 83mohm 25庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 30 A 83 mOhms - 10 V, + 25 V 5 V 28 nC + 175 C 111 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 140mohm 58庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 20 A 182 mOhms - 10 V, + 25 V 5 V 24 nC - 55 C + 175 C 107 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247-4L 140mohm 61庫存量
30在途量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 20 A 140 mOhms - 10 V, + 25 V 5 V 24 nC + 175 C 107 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247 27mohm 4庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 37 mOhms - 10 V, + 25 V 5 V 65 nC - 55 C + 175 C 156 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 30mohm
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 mOhms - 10 V, + 25 V 5 V 82 nC - 55 C + 175 C 249 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247 107mohm
30在途量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 113 mOhms - 10 V, + 25 V 5 V 28 nC - 55 C + 175 C 111 W Enhancement
Toshiba 碳化矽MOSFET G3 650V SiC-MOSFET TO-247-4L 27mohm 無庫存前置作業時間 10 週
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 58 A 27 mOhms - 10 V, + 25 V 5 V 65 nC + 175 C 156 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247-4L 15mohm 暫無庫存
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 15 mOhms - 10 V, + 25 V 5 V 158 nC + 175 C 431 W Enhancement
Toshiba TW027U65C,RQ
Toshiba 碳化矽MOSFET N-ch SiC MOSFET, 650 V, 0.027 ohm(typ.)a.18 V, TOLL, 3rd Gen. 暫無庫存
最少: 2,000
倍數: 2,000
: 2,000