新型氮化鎵場效應管
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are general-purpose, normally off e-mode devices that deliver superior performance and very low on-state resistance.
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Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).3/7/2025 -
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETsNormally off e-mode devices that deliver superior performance and very low on-state resistance.3/7/2025
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Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETsThese FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.1/7/2025 -
Infineon Technologies 700V CoolGaN™ G5 Power TransistorsDesigned to operate at high frequencies with superior efficiency, enabling ultra-fast switching.2/5/2025 -
Nexperia GANB8R0-040CBA雙向GaN FET40V、8.0mΩ的雙向GaN HEMT，採用緊湊型1.7mm x 1.7mm WLCSP封裝。14/4/2025 -
Infineon Technologies CoolGaN™ G3 Transistorsdesigned to deliver superior performance in high-power density applications.10/4/2025 -
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTsDesigned for high-performance power conversion applications.10/1/2025 -
Infineon Technologies CoolGaN™ 650V G5 TransistorsFeatures highly efficient gallium nitride (GaN) transistor technology for power conversion.20/12/2024 -
Infineon Technologies CoolGaN™ Gen 2 650V功率電晶體採用高效率GaN（氮化鎵）電晶體技術，可用於電壓高達650V的功率轉換。12/11/2024 -
Nexperia GANB4R8-040CBA雙向GaN FET採用WLCSP封裝的40V、4.8mΩ 雙向GaN高電子遷移率晶體管(HEMT)。1/10/2024 -
Qorvo QPD1035 GaN RF Power Transistors40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply.12/9/2024 -
Ampleon CLP24H4S30P GaN-SiC HEMT Power TransistorDesigned for continuous wave (CW) applications within the 2400MHz to 2500MHz frequency range.23/7/2024 -
Nexperia GANE3R9-150QBA氮化鎵(GaN) FET通用型150V、3.9mΩ 氮化鎵(GaN) FET，採用VQFN封裝。2/7/2024 -
Infineon Technologies 700V CoolGaN™ G4功率電晶體採用低Rth(j-c)設計，適用於高功率應用和高效率電源開關。27/5/2024 -
Renesas Electronics TP65H050G4YS 650V SuperGaN® FET50mΩ gallium nitride (GaN) normally-off device available in 4 Lead TO-247 package.15/3/2024 -
Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT72mΩ RDS(on) in top-side-cooled, surface-mount TOLT package that meets the JEDEC-standard (MO-332).22/2/2024 -
Nexperia GAN039 CCPAK1212封裝功率GaN FET採用銅夾封裝技術，具有低電感／開關損耗和高可靠性的特點。20/12/2023 -
Central Semiconductor GaN N-Channel FETsExcel in high voltage and low RDS(ON), making them ideal for efficient soft-switching applications.13/11/2023 -
ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICsDesigned for demanding electronics systems, blends high power density and efficiency.25/7/2023 -
Renesas Electronics TP65H070G4PS 650V SuperGaN® GaN FETA 650V, 70mΩ normally-off device offering superior quality and performance.7/6/2023 -
Nexperia eMode GaN FET（氮化鎵場效應晶體管）Offer a voltage range of 100V to 650V and superior switching performance.9/5/2023 -
Infineon Technologies CoolGaN™ 600V GIT HEMTsGaN enhancement-mode transistors with fast turn-on/turn-off speeds at minimum switching losses.8/3/2023