新型IGBT
STMicroelectronics STGWA30IH160DF2 1600V IH2 series IGBT was created by implementing an advanced proprietary trench gate field-stop structure. The performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low forward voltage drop is included. The STMicro STGWA30IH160DF2 is specifically designed to maximize efficiency for any resonant and soft-switching applications. The device is available in a TO-247 long lead package.
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STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBTCreated by implementing an advanced proprietary trench gate field-stop structure.22/5/2025
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ROHM Semiconductor RGE Field Stop Trench IGBTsFeatures low collector-emitter saturation voltage and low switching loss.15/1/2025 -
STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT with DiodeCombines two IGBTs and diodes in a half-bridge topology.24/12/2024 -
ROHM Semiconductor RGA80Tx 1200V場截止溝槽型IGBT此產品具備低開關和傳導損耗，適用於電動壓縮機和HV加熱器。17/10/2024 -
STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBTDeveloped using an advanced trench gate field stop structure.12/9/2024 -
STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBTDesigned using an advanced proprietary trench gate field stop structure.12/9/2024 -
IXYS Gen5 XPT IGBTOffers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.25/7/2024 -
STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT1200V, 40A, low-loss, offers low thermal resistance, and comes in a TO-247 long leads package.3/7/2024 -
onsemi AFGHxL40T Automotive Grade IGBTsAEC-Q101 qualified and uses a robust Field Stop VII Trench construction.12/6/2024 -
onsemi FGB5065G2-F085 EcoSPARK® 2 HV-HE IGBT650V N-channel ignition device for PTC heater and high current system applications.4/6/2024 -
Diotec Semiconductor DIWOx Fast Switching IGBT TransistorsInclude a reverse diode and use Trench and Fieldstop technology in a TO-247 package.24/4/2024 -
PANJIT PTGH High-Speed 650V Field Stop Trench IGBTsOffer superior high-speed switching capabilities with a low saturation voltage of 1.65V at TVJ 25°C.12/4/2024 -
onsemi Heat PumpsThe heat pump stands as a cornerstone of the global shift towards secure and sustainable heating.1/3/2024 -
onsemi AFGHL50T65RQDN 650V 50A IGBT4th generation field-stop IGBT that utilizes innovative technology.1/3/2024 -
onsemi FGY4LxxT120SWD N-Channel 1200V IGBTsThe devices use the novel field stop 7th generation IGBT technology and the Gen7 Diode.7/2/2024 -
Bourns Electrification SolutionsTransformers, chokes, resistors, and other products designed for systems used in electrification.20/12/2023 -
onsemi FGHL60T120RWD 1200V 60A Discrete IGBTUses advanced 7th-generation IGBT technology and is housed in a TO247 3-lead package.29/11/2023 -
onsemi FGHL40T120RWD 1200V 40A Discrete IGBTUses 7th-generation IGBT technology and is housed in a TO247 3-lead package.29/11/2023 -
onsemi AFGHxL25T Single N-Channel 1200V 25A IGBTsThese devices feature a robust and cost-effective Field Stop VII Trench construction.22/11/2023 -
onsemi FGY140T120SWD 1200V 140A Fast Discrete IGBTEquipped with advanced 7th-generation IGBT technology.13/11/2023 -
STMicroelectronics STGD4H60DF 600V 4A High-Speed H Series IGBTDesigned with an advanced trench gate field-stop structure.31/10/2023 -
Littelfuse 1200V Trench XPT™ IGBTs with Sonic DiodesDeveloped using XPT thin-wafer technology and Trench IGBT process with anti-parallel sonic diodes.18/10/2023 -
onsemi FGH4L50T65SQD 650V 50A High-Speed IGBTThe device uses novel field stop IGBT technology in this series of 4th-generation IGBTs.13/10/2023 -
onsemi FGH4L50T65MQDC50 650V Field Stop Mid Speed IGBTUses 4th-generation field-stop IGBT technology and 1.5 SiC Schottky Diode technology.15/8/2023 -
Nexperia NGW30T60M3DF溝槽式場截止IGBT採用第三代技術，結合了載流子儲存溝槽式閘極和場截止 (FS) 結構。9/8/2023